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MPSA44U
NPN Silicon Epitaxial Planar Transistor
for high voltage switching and amplifier applications.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot TJ TS
Value 500 400 6 300 625 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at IC = 1 mA, VCE = 10 V at IC = 10 mA, VCE = 10 V at IC = 30 mA, VCE = 10 V Collector Cutoff Current at VCB = 400 V Collector Cutoff Current at VCE = 400 V Emitter Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 A Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 A Collector Emitter Saturation Voltage at IC = 1 mA, IB = 0.1 mA at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Collector Output Capacitance at VCB = 20 V, f = 1 MHz Symbol hFE hFE hFE ICBO ICES IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VCE(sat) VCE(sat) VBE(sat) Cob Min. 25 40 40 500 400 6 Max. 0.1 0.5 0.1 0.4 0.5 0.75 0.75 7 Unit A A A V V V V V V V pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 03/11/2007
MPSA44U
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 03/11/2007

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